▎ 摘　　要

NOVELTY - The device has a semiconductor substrate (210) having a first region and a second region. A graphene layer (220) is formed on the first region of substrate. A source electrode (230) is formed on first portion of graphene layer and gate electrode (240) is formed on second portion of graphene layer. An insulating layer is provided between the graphene layer and gate electrode. A drain electrode (250) is formed on the second region of substrate. The substrate has a tunable Schottky barrier formed by junction of the source electrode, the graphene layer, and semiconductor substrate. USE - Graphene device. ADVANTAGE - The energy barrier decreases, and the electrons pass through the semiconductor substrate more easily by a tunneling effect through the semiconductor substrate. Thus, the same effect as a barrier caused by the insulating layer of the source electrode is shown, and the insulating layer of the source electrode is removed. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view illustrating the process of fabricating graphene transistor. Semiconductor substrate (210) Graphene layer (220) Source electrode (230) Gate electrode (240) Drain electrode (250)