• 专利标题:   Production of graphene comprises selecting metal foil substrate, adding foil substrate to chemical vapor deposition reaction furnace, adding copper substrate, reacting and cooling.
  • 专利号:   CN104099577-A, CN104099577-B
  • 发明人:   JIN C, YANG X
  • 专利权人:   SUZHOU SDIK NEW MATERIAL TECHNOLOGY CO, SUZHOU SIDIKE NEW MATERIALS SCI TECHNO
  • 国际专利分类:   C23C016/26
  • 专利详细信息:   CN104099577-A 15 Oct 2014 C23C-016/26 201503 Pages: 6 Chinese
  • 申请详细信息:   CN104099577-A CN10363239 29 Jul 2014
  • 优先权号:   CN10363239

▎ 摘  要

NOVELTY - Production of graphene comprises selecting metal foil substrate, adding foil substrate to chemical vapor deposition reaction furnace, adding helium at 400-600 standard cubic centimeters per minute (SCCM), adding copper substrate, heating at 900-100- degrees C for 40-50 minutes, adding helium at 500-800 SCCM, reacting at 900-100 degrees C under hydrogen and methane gas at flow ratio of 1:1-100 for 50-70 minutes, and cooling at 10 degrees C to 500-600 degrees C for 60 minutes. USE - Method for producing graphene. ADVANTAGE - The simple and inexpensive method ensures high product purity.