▎ 摘　　要

NOVELTY - Preparation of nitride vertical structure LED involves providing (A) a single crystal metal substrate having hexagonal crystal structure symmetry, subjecting the single crystal metal substrate to high temperature treatment in a reducing atmosphere, forming (A2) multi-layered graphite layer having hexagonal crystal structure symmetry on the upper surface of the single crystal metal substrate using chemical vapor deposition or thin film transfer technique, depositing (A3) chemically stable and high temperature resistant metal on the lower surface and side wall of the single crystal structure using thin film deposition technique, activating (A4) the graphene barrier layer, formation of carbon-nitrogen bonds and dangling bonds on the surface, increasing the nucleation sites required for the nucleation growth of the LED, and restoring the graphene barrier layer, and preparing (A5) a multi-quantum well layer electron blocking layer, a p-type hole injecting layer, and a p-type contact layer. USE - Preparation of nitride vertical structure LED. ADVANTAGE - The method is simple, economical, easy, suitable for industrial production, and provides high power nitride vertical structure LED and produces LED in high yield and having excellent luminous efficiency, heat dissipation ability and improved crystal quality and simple device. DETAILED DESCRIPTION - Preparation of nitride vertical structure LED involves providing (A) a single crystal metal substrate having hexagonal crystal structure symmetry, subjecting the single crystal metal substrate to high temperature treatment in a reducing atmosphere after chemical cleaning to remove the single crystal metal substrate and surface oxide layer to obtain clean single crystal metal substrate, forming (A2) multi-layered graphite layer having hexagonal crystal structure symmetry on the upper surface of the single crystal metal substrate using chemical vapor deposition or thin film transfer technique and multilayer graphite layer completely covering the surface of the metal substrate using a rapid cooling method and forming a surface of the multilayered perylene layer to form a graphene barrier layer on the single crystal metal substrate, depositing (A3) chemically stable and high temperature resistant metal on the lower surface and side wall of the single crystal structure using thin film deposition technique to form a metal resist layer and inhibiting the diffusion behavior of the metal atom during the high temperature epitaxy of the single crystal metal substrate and protecting the reaction chamber from unintentional incorporation of metal atoms during epitaxial subsequent structures, activating (A4) the graphene barrier layer by bombarding with plasma nitrogen source, formation of carbon-nitrogen bonds and free bonds on the surface, increasing the nucleation sites required for the nucleation growth of the LED, and restoring the graphene barrier layer to structural damage during the activation process, preparing (A5) a multi-quantum well layer electron blocking layer, a p-type hole injecting layer, and a p-type contact layer on the n-type electron injecting layer using thin film deposition technique.