▎ 摘　　要

NOVELTY - Method for preparing boron-doped graphene thin film involves heating the substrate in oxygen-free reaction room and filling with carbon source, boron source gas and inert gas, reacting the mixture, stopping inflating, and adding the substrate to iron(III) chloride solution, filtering the reacted mixture to obtain boron-doped graphene, performing ultrasonic dispersion on the boron-doped graphene using methyl pyrrolidone, filtering the boron-doped graphene suspension, obtaining the solid product in the upper filter film, and drying the solid product. USE - The method is useful for preparing boron-doped graphene thin film which is used in electrochemical capacitor or lithium ion battery as electrode sheet (all claimed). ADVANTAGE - The method enables to prepare boron-doped graphene thin film which has excellent stretching strength and can be directly used as electrode sheet. DETAILED DESCRIPTION - Method for preparing boron-doped graphene thin film involves heating the substrate in oxygen-free reaction room at 500-1300 degrees C and filling with carbon source, boron source gas and inert gas, reacting the mixture at 30-300 degrees C, stopping inflating, and adding the substrate to iron(III) chloride solution, until the substrate is dissolved completely filtering the reacted mixture to obtain boron-doped graphene, performing ultrasonic dispersion on the boron-doped graphene using methyl pyrrolidone, optionally filtering the boron-doped graphene suspension, obtaining the solid product in the upper filter film, and drying the solid product. An INDEPENDENT CLAIM is included for preparing boron-doped graphene thin film which is prepared by the above-mentioned method.