• 专利标题:   Detecting abnormal growth of graphene by preparing inspected object having graphene film formed by chemical vapor deposition on substrate, using dark-field optical system to receive light from film and detecting abnormal growth of graphene.
  • 专利号:   JP2020158315-A, WO2020195485-A1
  • 发明人:   IFUKU R, MATSUMOTO T, FUJIO A, SAITO K, RYOTA I, TAKASHI M, AKIRA F, KOUSAKU S
  • 专利权人:   TOKYO ELECTRON LTD, TOKYO ELECTRON LTD
  • 国际专利分类:   C01B032/18, C01B032/186, G01N021/956, H01L021/66, B82Y035/00, C23C016/26, H01L021/205
  • 专利详细信息:   JP2020158315-A 01 Oct 2020 C01B-032/186 202083 Pages: 9 Japanese
  • 申请详细信息:   JP2020158315-A JP056007 25 Mar 2019
  • 优先权号:   JP056007

▎ 摘  要

NOVELTY - Method for detecting abnormal growth of graphene, involves preparing an inspected object having a graphene film formed by chemical vapor deposition (CVD) on a substrate, using a dark-field optical system to receive light from the graphene film, and detecting abnormal growth of graphene by inspecting the received light. USE - The method is useful for detecting abnormal growth of graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a device for detecting abnormal growth of graphene comprising a dark-field optical system that irradiates a graphene film formed by CVD on a substrate with light and receives scattered light, and an apparatus having a photodetector for detecting the light intensity of light received by the dark field optical system, and detecting abnormal growth of the graphene based on the detection result of the photodetector.