▎ 摘　　要

NOVELTY - A semiconductor structure comprises a first conductive feature disposed in a first dielectric layer; a second conductive features disposed in the first dieectric layer and adjacent to the first conductive feature; a graphene layer arranged over the first and the second conductive features; and a second dielectric layer disposed on the first layer. Sidewalls of the second layer are defined by the graphene layer. The structure further comprises a metal capping layer arranged between the graphene layer and the features, and a via electrically coupled to first feature. USE - Semiconductor structure. ADVANTAGE - The method enables utilizing a scaling down process to increase production efficiency and reduce associated costs. The method allows the conductive features to be formed in the interconnect structure to reduce or eliminate misalignment between the conductors, thus reducing contact resistance and improving reliability of the interconnection structure. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing a semiconductor structure. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for manufacturing a semiconductor structure.