▎ 摘　　要

NOVELTY - Magnetic tunnel junction terahertz wave detector comprises anti-ferromagnetic layer (1), pinned layer (2), graphene layer (3), and barrier layer (4). The material of the anti-ferromagnetic layer is a hard magnetic anti-fertilization material. The pinned layer is placed on the anti-ferromagnet layer, the metal of the pins is a metal or a semi-metal with a high spin polarizability. The graphene layer is arranged on the pinned layer and the barrier layer is positioned on the graphene layer. A free layer (5) is provided on the barrier layers, and the free layer material is a soft magnetic material with weak magnetism. USE - Magnetic tunnel junction terahertz wave detector used in military and civil aspects. Uses include but are not limited to environment monitoring, medical diagnosis, radio astronomy and broadband mobile communication. ADVANTAGE - The detector has high terahertz wave detection sensitivity, and changes the magnetic resistance of the magnetic tunnel junction seriously depends on the quantum tunneling characteristic of the barrier layer, so that the noise of the signal measured by the detector is small. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of a magnetic tunnel junction terahertz wave detector. Anti-ferromagnetic layer (1) Pinning layer (2) Graphene layer (3) Barrier layer (4) Free layer (5)