• 专利标题:   Manufacture of graphene quantum dots for e.g. semiconductor material, involves dispersing carbon nanomaterial in mixture of sulfuric acid and nitric acid, oxidizing, adding base, adding poor solvent and separating graphene quantum dots.
  • 专利号:   KR1430361-B1
  • 发明人:   HUN Y J, SIK J J, U LEE E
  • 专利权人:   SNU R DB FOUND
  • 国际专利分类:   B82Y015/00, C01B031/02, C09K011/65
  • 专利详细信息:   KR1430361-B1 13 Aug 2014 C01B-031/02 201463 Pages: 11
  • 申请详细信息:   KR1430361-B1 KR067021 12 Jun 2013
  • 优先权号:   KR067021

▎ 摘  要

NOVELTY - Manufacture of graphene quantum dots involves dispersing carbon nanomaterial in mixture of sulfuric acid and nitric acid, oxidizing, bonding sulfate ion to the surface of graphene oxide, adding base, adjusting pH to 7, adding poor solvent to neutralized graphene oxide solution to form sodium sulfate salt, and separating graphene quantum dots using a centrifuge. USE - Manufacture of graphene quantum dots used as semiconductor material for electronic device and fluorescent material for energy converter. ADVANTAGE - Graphene quantum dots of various sizes and uniform size distribution are easily, economically and quickly manufactured with high yield.