• 专利标题:   Manufacture of graphene structure involves forming defect in upper portion of pre-graphene thin film by treating surface of pre-graphene thin film, and doping surface with metal element in surface-treated pre-graphene thin film.
  • 专利号:   KR2015142107-A, KR1590709-B1
  • 发明人:   JI H K, WON O S, GWANG S Y, SOO Y O
  • 专利权人:   UNIV KOREA RES BUSINESS FOUND
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   KR2015142107-A 22 Dec 2015 C01B-031/04 201613 Pages: 8 English
  • 申请详细信息:   KR2015142107-A KR070020 10 Jun 2014
  • 优先权号:   KR070020

▎ 摘  要

NOVELTY - Manufacture of graphene structure involves forming a pre-graphene layer on the pre-graphene thin film, transferring the substrate to the pre-graphene thin film, forming a defect in an upper portion of the pre-graphene thin film by treating the surface of pre-graphene thin film, and doping the surface with metal element in surface-treated pre-graphene thin film. USE - Manufacture of graphene structure (claimed). ADVANTAGE - The method forms graphene thin-film structure with reduced sheet resistance.