• 专利标题:   Composite seed crystal useful for aluminum nitride single crystal growth comprises aluminum nitride ceramic substrate, graphene thin layer on aluminum nitride ceramic substrate and aluminum nitride thin film on graphene thin layer.
  • 专利号:   CN111733456-A
  • 发明人:   GUO L, HU W, WANG W, CHEN X
  • 专利权人:   CHINESE ACAD SCI PHYSICS INST
  • 国际专利分类:   C23C014/06, C23C016/26, C23C016/30, C30B023/02, C30B029/40
  • 专利详细信息:   CN111733456-A 02 Oct 2020 C30B-029/40 202084 Pages: 9 Chinese
  • 申请详细信息:   CN111733456-A CN10227102 25 Mar 2019
  • 优先权号:   CN10227102

▎ 摘  要

NOVELTY - Composite seed crystal comprises aluminum nitride ceramic substrate, a graphene thin layer on the aluminum nitride ceramic substrate and an aluminum nitride thin film on the graphene thin layer. USE - The composite seed crystal is useful for aluminum nitride single crystal growth. ADVANTAGE - The method: meets the needs of seed crystals of any size. The composite seed crystal: has similar physical properties to aluminum nitride single crystal; does not introduce foreign impurities, and has no problem of lattice mismatch and thermal expansion coefficient mismatch caused by heterogeneous seeds. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing the composite seed crystal. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the composite seed crystal (Drawing includes non-English language text).