• 专利标题:   Photonic crystal sensor is located on silicon dioxide substrate, and its production materials include silicon, graphene and humidity-sensitive material polyvinyl alcohol.
  • 专利号:   CN115655349-A
  • 发明人:   WANG J, HAN Z, YU L, TIAN H
  • 专利权人:   UNIV BEIJING POST TELECOM
  • 国际专利分类:   G01D021/02, G01K011/00, G01N021/41, G02B006/122
  • 专利详细信息:   CN115655349-A 31 Jan 2023 G01D-021/02 202315 Chinese
  • 申请详细信息:   CN115655349-A CN11166362 23 Sep 2022
  • 优先权号:   CN11166362

▎ 摘  要

NOVELTY - Photonic crystal sensor is located on a silicon dioxide substrate, and its production materials include silicon, graphene and humidity-sensitive material polyvinyl alcohol (PVA). The thicknesses of the silicon dioxide substrate, silicon core layer, and PVA cladding layer are respectively 2µm, 220nm, and 2µm. The sensor includes a waveguide, a one-dimensional photonic crystal stack structure, and a one-dimensional photonic crystal nanobeam structure covered with graphene. The sensor uses graphene to actively tune the electromagnetically induced transparency (EIT)-like effect and apply it to the dual-parameter sensing of relative humidity and temperature. USE - Photonic crystal sensor. ADVANTAGE - The graphene has excellent photoelectric property, can regulate and control the charge of graphene easily by the mode of adjusting external voltage meter energy level, thus fine-tuning the resonance wavelength of the nanobeam structure to change the transparent window of the EIT-like effect, and realizing the active tuning of the EIT-like effect without adjusting the structural parameters of the sensor.