▎ 摘　　要

NOVELTY - The method involves forming a sacrificial layer (11) and a graphene layer (13) sequentially on a substrate (10). The graphene layer is bonded to a target layer. The sacrificial layer is removed using an excimer laser to irradiate the sacrificial layer through the substrate and separate the substrate from the graphene layer when the substrate is immersed in a deionized water (DI) solution. A catalyst layer (12) is removed after the removing the sacrificial layer, where the catalyst layer defines a gibbs free energy value greater than gibbs free energy value of the sacrificial layer. USE - Method for transferring graphene to manufacture a device e.g. sensor device, transistor device such as bipolar junction transistor, FET and heterogeneous bipolar transistor, and solar cell device (all claimed). Can also be used for a memory device, electronic paper, LED device and an organic electroluminescent diode device. ADVANTAGE - The method enables achieving desired conductivity when graphene is used as a panel conductive thin film of display devices and improving light transmission of the devices. The method enables transferring the graphene with improved transfer characteristics. The method enables an insulating layer to prevent or reduce dispersion of the sacrificial layer and the catalyst layer due to higher temperature. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a sensor device, transistor and a solar cell device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view illustrating a method for transferring graphene. Substrate (10) Sacrificial layer (11) Catalyst layer (12) Graphene layer (13)