▎ 摘　　要

NOVELTY - Manufacturing a graphene film, comprises: (a) annealing a first substrate in a furnace filled with a mixed gas; (b) moving the first substrate into a growing chamber of a molecular beam epitaxy system, where a temperature of the growing chamber is room temperature to 500 degrees C; (c) heating a carbon source set in the molecular beam epitaxy system to evaporate carbon atoms onto a surface of the first substrate; and (d) depositing the carbon atoms on the surface of the first substrate to grow the graphene film. USE - The method is useful for manufacturing a graphene film and a graphene channel within a transistor, where the transistor is a back-gate transistor (claimed). ADVANTAGE - The method provides graphene channel within a transistor under low temperature and having excellent current modulation characteristics. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for manufacturing a graphene channel within a transistor, comprising (a)-(d) as above per se, (e) replacing the first substrate with a second substrate, and (f) etching the graphene film by a photolithography process.