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  • 专利标题:   Manufacture of graphene for layered structure, involves exposing silicon substrate to primary gas containing carbon to form silicon carbide layer by carbonization of surface of silicon substrate, and supplying secondary gas having carbon.
  • 专利号:   WO2011016601-A1, KR2011014847-A
  • 发明人:   KIM K, KIM K B
  • 专利权人:   SNU R DB FOUND
  • 国际专利分类:   B32B018/00, C01B031/02
  • 专利详细信息:   WO2011016601-A1 10 Feb 2011 C01B-031/02 201118 Pages: 22
  • 申请详细信息:   WO2011016601-A1 WOKR006865 20 Nov 2009
  • 优先权号:   KR072417

▎ 摘　　要

NOVELTY - A silicon substrate is exposed to a primary gas containing carbon to form a silicon carbide layer by carbonization of the surface of the silicon substrate. A secondary gas containing carbon is supplied on the silicon carbide layer to form a graphene layer. Thus, graphene is manufactured. USE - Manufacture of graphene for layered structure (claimed). ADVANTAGE - The graphene is economically manufactured. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for layered structure.