• 专利标题:   Fabrication of multilayer graphene structure used in e.g. semiconductor, involves providing graphene layers, and providing interstitial layer comprising polyaromatic compound between graphene layers.
  • 专利号:   US2016264814-A1
  • 发明人:   LOBEZ C J M, DIMITRAKOPOULOS C D, FRANKLIN A D, SMITH J T
  • 专利权人:   INT BUSINESS MACHINES CORP
  • 国际专利分类:   C09D165/00, C23C016/02, C23C016/26
  • 专利详细信息:   US2016264814-A1 15 Sep 2016 C09D-165/00 201665 Pages: 5 English
  • 申请详细信息:   US2016264814-A1 US747346 23 Jun 2015
  • 优先权号:   US642249, US747346

▎ 摘  要

NOVELTY - Fabrication (200) of multilayer graphene structure involves providing (204) a graphene layer (g1), providing graphene layer (g2), and providing an interstitial layer (a1) between the graphene layers (g1) and (g2). The interstitial layer (a1) comprises a polyaromatic compound. USE - Fabrication of multilayer graphene structure. Uses include but are not limited to semiconductor, electronic applications, mechanical applications, medical applications and military applications. ADVANTAGE - The method enables fabrication of lightweight multilayer graphene structure having excellent strength, flexibility, thermal conductivity and electroconductivity. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of fabrication of multilayer graphene structure. Fabrication of multilayer graphene structure (200) Provision of graphene layer (204) Coating of graphene with solution comprising polyaromatic compound (206) Deposition of graphene layer on interstitial layer (208) Deposition of additional graphene (210)