• 专利标题:   Doped graphene electrode comprises graphene electrode formed on substrate, and dopant layer formed on graphene electrode, where dopant layer is fluorinated acid dopant layer, and has improved considerable level and reduced energy barrier.
  • 专利号:   KR2017119511-A
  • 发明人:   LEE T W, HAN T H, KWON S J
  • 专利权人:   POSTECH ACADIND FOUND
  • 国际专利分类:   H01B001/04, H01B005/14, H01L031/0224, H01L051/00
  • 专利详细信息:   KR2017119511-A 27 Oct 2017 H01B-005/14 201782 Pages: 19
  • 申请详细信息:   KR2017119511-A KR047633 19 Apr 2016
  • 优先权号:   KR047633

▎ 摘  要

NOVELTY - Doped graphene electrode comprises a graphene electrode (120) formed on a substrate (110), and a dopant layer (130) formed on the graphene electrode, where the dopant layer is a fluorinated acid dopant layer. USE - Doped graphene electrode. ADVANTAGE - The doped graphene electrode has improved considerable level, reduced energy barrier required for hole injection or extraction in the organic electronic device and increased current per unit voltage of the device, and lowers operating voltage of the electronic device, and maintains characteristics of the doped graphene electrode. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing doped graphene electrode, which involves: (A) growing graphene on a transfer substrate provided with a catalytic metal; (B) introducing an etching solution into the transfer substrate to remove catalyst metal; (C) leaving pre-treatment dopant contained in the etching solution on the graphene; and (D) attaching the graphene to the substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of the graphene electrode and a dopant layer in a substrate structure. Substrate (110) Graphene electrode (120) Dopant layer (130)