▎ 摘　　要

NOVELTY - A semiconductor transistor includes substrate (100), and a semiconductor channel layer (101) which is provided on substrate, where high-k gate dielectric layer with first width is provided on semiconductor channel layers (101,102). A gate structure with second width is provided on high-k gate dielectric layer. The gate structure includes two side walls and a gate (103), where first width is greater than or equal to second width, and a source (106) and a drain (107) are provided on both sides of gate structure. USE - Semiconductor transistor e.g. non-doped source/drain transistor and silicon-based transistor, for use in electronic industry. ADVANTAGE - The transistor optimizes the energy band distribution of semiconductor transistor, especially narrow band gap semiconductor transistor. By adjusting energy band of source and drain terminals, the off-state current and static energy consumption is suppressed, is compatible with industrialized semiconductor process, and enables large-scale integrated manufacturing. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method for manufacturing semiconductor transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the source/drain structure. Substrate (100) Semiconductor channel layers (101,102) Gate (103) Side wall (105) Source (106) Drain (107)