▎ 摘　　要

NOVELTY - Synthesizing graphene-like layers at a predetermined depth of porous silicon structures, comprises carrying out the chemical vapor deposition process in the reaction zone at a temperature of 800-1100 degrees C in ethanol vapor in an inert gas at the differential pressure mode of 5x 104 to 1x 103 Pa in the working zone, where the regime of pressure drop in the working zone is repeated after 9-11 minutes before the creation of graphene-like layers on the walls of the pores at a given depth of porous silicon structures. USE - The method is useful for synthesizing graphene-like layers at a predetermined depth of porous silicon structures.