• 专利标题:   Graphene growth device comprises deposition chamber, heating box, double sealing structure comprising three-way valve, sealing pipe and sealing end head, air pumping system and inflation system.
  • 专利号:   CN211111068-U
  • 发明人:   XU C, WANG J, WANG X
  • 专利权人:   XIAMEN BADOU NEW MATERIALS TECHNOLOGY CO
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN211111068-U 28 Jul 2020 C01B-032/186 202073 Pages: 8 Chinese
  • 申请详细信息:   CN211111068-U CN22124753 02 Dec 2019
  • 优先权号:   CN22124753

▎ 摘  要

NOVELTY - The utility model claims a graphene growth device with double sealing structure deposition chamber, comprising: a deposition chamber, a heating box, a double sealing structure, an air pumping system and an inflation system; the deposition chamber is a tube body with openings at two ends; the heating box is hermetically covered on the outer side of the deposition chamber; the number of the double sealing structure is two, and respectively connected with the two ends of the opening of the deposition chamber; the double sealing structure comprises a three-way valve, a sealing pipe and a sealing end; the reversing opening of the three-way valve is connected with the deposition chamber; one end opening of the sealing pipe is connected with the outlet of the three-way valve; the sealing end is sealed and fixed at the other end opening of the sealing pipe; the number of the pumping system is two, and respectively hermetically connected with the inlet of the three-way valve; the inflation system is hermetically connected with the inlet of a three-way valve. The utility model overcomes the defect that the existing technology when preparing a certain size of graphene, the device has bad tightness, which is good for stably preparing high quality large area graphene.