▎ 摘　　要

NOVELTY - The FET has a graphene channel layer generating photoconductive effect under infrared radiation to change electricity design of the FET. Wavelength of an infrared ray is greater than or equal to 5 microns. The graphene channel layer is provided with 2 to 10 layers of graphite. Width of a forbidden band of the graphene channel layer is 1-250 meV. The wave length range of the infrared ray is determined according to the width of the forbidden band of the graphene channel layer. A grid dielectric layer is made of hexagonal boron nitride or hafnium oxide powder. USE - Graphene FET for use in an infrared detector (claimed) for sky survey infrared detection application. ADVANTAGE - The FET has high sensitivity and low power consumption. The application of an infrared detector produced by the FET avoids the need for a refrigerating system, thus reducing the operational cost. The infrared detector is simple, stable, light in weight and less in toxic effect. The FET has photoconductive effect. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene FET.