▎ 摘 要
NOVELTY - Preparing two-dimensional materials by using oxide semiconductor nanopowders to exfoliate layered materials comprises (i) selecting p-type semiconductor nanopowders smaller than 100 nm, where the work function must be greater than the work function of the material to be stripped, and the material to be stripped is layered compound with a microstructure, (ii) grinding and compounding the exfoliated material and the extremely excessive p-type semiconductor nanopowder in a mass ratio of 1:21.9-1:1000, it is necessary to ensure that the total surface area of all quality nanopowders is at least greater than half of the total surface area of the single layer of the material to be stripped, and (iii) grinding until more than 90% of the two-dimensional material is exfoliated into single layer or few layers are combined with nanoparticles to form intermediate structure with an electron microscope. USE - The method is useful for preparing two-dimensional materials by using oxide semiconductor nanopowders to exfoliate layered materials. ADVANTAGE - The method can obtain two types of practical products, which has wide range of special uses. DETAILED DESCRIPTION - Preparing two-dimensional materials by using oxide semiconductor nanopowders to exfoliate layered materials comprises (i) selecting p-type semiconductor nanopowders smaller than 100 nm, where the work function must be greater than the work function of the material to be stripped, and the material to be stripped is layered compound with a microstructure, (ii) grinding and compounding the exfoliated material and the extremely excessive p-type semiconductor nanopowder in a mass ratio of 1:21.9-1:1000, it is necessary to ensure that the total surface area of all quality nanopowders is at least greater than half of the total surface area of the single layer of the material to be stripped, (iii) grinding until more than 90% of the two-dimensional material is exfoliated into single layer or few layers are combined with nanoparticles to form intermediate structure with an electron microscope, (iv) adding the salt solution to the separation reaction, suspending the separated two-dimensional material in the upper part of the solution, or adding it to an organic solvent, heating it above 25 degrees C, and suspending the separated two-dimensional material in the upper part of the solution, and (v) taking out the solution or the suspended matter in the solvent, and drying and removing the solvent to obtain single-layer or multilayer two-dimensional material.