▎ 摘　　要

NOVELTY - Patterning two-dimensional (2D) material layer comprises selectively forming a first material layer on a surface of a substrate to form a first region in which the first material layer covers the surface of the substrate and to form a second region in which the surface of the substrate is exposed from the first material layer. The first material layer has a strong adhesive force with a 2D material. The 2D material layer is formed in both the first region and the second region. The 2D material layer is removed from the second region based on using a physical removal method and not removing the 2D material layer from the first region, such that the 2D material layer remains exclusively in the first region. USE - Method for patterning a two-dimensional material layer. ADVANTAGE - The method reduces process time and contamination of the channel layer after patterning, and increases carrier mobility (electron mobility) in a thickness direction of the 2D material layer by the intercalation material using graphene material having a hexagonal honeycomb structure with high electrical mobility, high thermal properties, chemical stability, and large surface area, and thus improves performance and operation characteristics of the semiconductor device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing a semiconductor device, which involves selectively forming a first material layer on a surface of a substrate to form a first region, forming a 2D material layer having a layered structure of a 2D material in both the first region and the second region, forming a channel layer based on removing the 2D material layer from the second region, forming a first electrode and a second electrode, and forming a third electrode extending in parallel with the channel layer.