▎ 摘　　要

NOVELTY - Nitride templates based on metal substrates comprises metal substrate (1), a two-dimensional material film (2), which is located on one side of the metal substrate, an inert material pattern mask layer, which is located on the side of the two-dimensional material film away from the metal substrate, a nitride epitaxial layer, which is located on the side of the inert material pattern mask layer (3) away from the metal substrate. The surface of the two-dimensional material thin film is activated to provide nucleation sites for the growth of the nitride material, and the two-dimensional material thin film is also used to inhibit the interface reaction of the high temperature epitaxy process. The inert material pattern mask layer realizes the selective epitaxy of the nitride material, thereby realizing lateral over-epitaxial growth, reducing the dislocation density in the nitride epitaxial layer (4), and improving the crystal quality of the epitaxial layer. USE - Nitride templates based on metal substrates for use in aluminium gallium nitride-based deep ultraviolet light-emitting diode devices, light-emitting diode, photodetectors or high-electron-mobility transistor (claimed). ADVANTAGE - The nitride templates based on metal substrates also provides a preparation method and application of the template, and the composite metal substrate structure of the metal substrate/two-dimensional material film/inert material pattern mask layer is adopted, so that the direct high-temperature epitaxial growth of high-quality and stress-free nitride materials is realized, the template has higher expandability. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: a method for preparing a metal substrate-based nitride template, which involves the two-dimensional material film is directly epitaxially grown on the metal substrate by the chemical vapor deposition (CVD) method, or the two-dimensional material film is grown on the catalytic metal nickel or copper foil by the CVD method, and then the two-dimensional material film is grown by a wet transfer process, transferring the dimensional material film onto the metal substrate; ii. depositing a certain thickness of an inert film on the surface of the two-dimensional material film, and then a mask pattern is prepared on the inert film; iii. using plasma treatment and then subjecting the two-dimensional material film to high-temperature nitridation treatment based on molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD) method to form effective doping of N atoms to form a metal composite substrate; and vi. nitride materials are epitaxially grown on the metal composite substrate based on MBE and MOCVD methods; an application of a nitride template based on metal substrate in aluminium gallium nitride-based deep ultraviolet light-emitting diode devices, which comprises nitride template based on metal substrate is used as the substrate, followed by epitaxial n-aluminium gallium nitride electron transport layer, aluminium gallium nitride multiple quantum well structure with alternating high and low aluminum composition, p-aluminium gallium nitride hole transport layer; and a metal-substrate-based nitride template for epitaxy and device applications of gallium arsenide or indium phosphide second-generation semiconductor materials, which comprises nitride template based on metal substrate as the substrate, growth epitaxial materials or devices, the device is light-emitting diode, photodetectors or high-electron-mobility transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a nitride templates based on metal substrates. 1Metal substrate 2Two-dimensional material film 3Inert material pattern mask layer 4Nitride epitaxial layer