• 专利标题:   Method of fabricating patterned graphene sheets for apparatus involves fabricating substrate with patterned oxide surface, and applying graphene sheets to patterned oxide surface to form layer of graphene.
  • 专利号:   WO2016081929-A1, US2017324166-A1
  • 发明人:   WANG K, NAVABISHIRAZI A, YAZDANI M, WANG K L
  • 专利权人:   UNIV CALIFORNIA
  • 国际专利分类:   C01B031/04, H01Q017/00, H01Q009/04, C01B032/186, C01B033/12, G03F007/20, H01Q001/36, H01Q003/01
  • 专利详细信息:   WO2016081929-A1 26 May 2016 H01Q-009/04 201638 Pages: 37 English
  • 申请详细信息:   WO2016081929-A1 WOUS062039 21 Nov 2015
  • 优先权号:   US083225P, US598546

▎ 摘  要

NOVELTY - Method of fabricating patterned graphene sheets involves successively performing step (a) of producing greater than or equal to 1 graphene sheets, step (b) of fabricating substrate (28) with patterned oxide surface (30), step (c) of applying graphene sheets to patterned oxide surface to form layer of graphene, and step (d) of conforming layer of applied graphene sheets to surface pattern of oxide surface. USE - Method of fabricating patterned graphene sheets for apparatus (claimed). ADVANTAGE - The method produces corrugated graphene sheets with both periodic and/or non-periodic, non-intrinsic ripples that will allow control over device characteristics including electron transport and optics of graphene sheets. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) method of fabricating microstrip patch antenna which involves fabricating silicon substrate with periodic sinusoidal patterned oxide surface, conforming greater than or equal to 1 layer of conductor to surface pattern of patterned oxide surface of silicon substrate, positioning silicon substrate adjacent to ground plane (38), and coupling conductive layer to port; (2) method of fabricating substrate with patterned oxide surface which involves thermally oxidizing surface of silicon base to form oxidized silicon bases, patterning oxidized base with photolithography, forming pattern in silicon base, clearing surface oxidization from patterned silicon base, growing 1st oxide mask on cleaned patterned silicon base, removing 1st oxide mask from patterned silicon base, and growing 2nd oxide mask on patterned silicon base to produce final silicon substrate with patterned oxide surface; (3) apparatus comprising silicon substrate with patterned silicon dioxide surface and layer of graphene disposed on silicon dioxide surface of silicon substrate conforming to silicon dioxide pattern; and (4) microstrip patch antenna apparatus comprising greater than or equal to 1 patch of greater than or equal to 1 layers of conductor conformed to sinusoidal patterned oxide surface of silicon substrate, ground plane adjacent to silicon substrate, and port coupled to conductor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional diagram of a patch antenna with substrate sinusoidally corrugated in 1 dimension. Substrate (28) Corrugated surface (30) Ground plane (38)