▎ 摘　　要

NOVELTY - The utility model claims one with grid-control semiconductor device's new gate structure, belonging to the field of semiconductor high frequency power device and a high voltage device. The utility model is composed of gate structure along the grid width direction medium grid and a Schottky gate are connected together. And conventional gate structure, the utility model has main innovative is along the grid width direction Schottky gate and gate's new alternate grid structure by the grid medium reduces the leakage current, at the same time, the Schottky gate improving reliability of gate control capability, a semiconductor device breakdown voltage and the frequency feature's contradiction relationship, at the same time, with the conventional medium gate process, the utility model only needs to change the etching gate dielectric's photo-etching does not increase the technical steps and cost.