▎ 摘　　要

NOVELTY - A graphene-based water-soluble quantum dots/poly (3,4-ethylenedioxy-thiophene)-poly (styrene sulfonic acid) composite memory storage device comprises lower electrode, which is spin-coated on the upper side with water-soluble quantum dots graphene/poly (3,4-ethylenedioxy-thiophene)-poly (styrene sulfonic acid) composite layer of an organic memory device and memory storage, where the memory storage layer is deposited on the organic layer of the electrode. USE - Graphene-based water-soluble quantum dots/poly (3,4-ethylenedioxy-thiophene)-poly (styrene sulfonic acid) composite memory storage device. ADVANTAGE - The method enables preparing device with mild experimental conditions, in simple and cost effective manner. DETAILED DESCRIPTION - A graphene-based water-soluble quantum dots/poly (3,4-ethylenedioxy-thiophene)-poly (styrene sulfonic acid) composite memory storage device comprises lower electrode, which is spin-coated on the upper side with water-soluble quantum dots graphene/poly (3,4-ethylenedioxy-thiophene)-poly (styrene sulfonic acid) composite layer of an organic memory device and memory storage, where the memory storage layer is deposited on the organic layer of the electrode, the water-soluble graphene quantum dot/poly poly (3,4-ethylenedioxy-thiophene)-poly (styrene sulfonic acid) composite material is prepared by performing electrochemical preparation of water-soluble graphene quantum dot, adding water soluble graphene quantum dot with aqueous solution of poly (3,4 - ethylenedioxy-thiophene) - poly (styrene sulfonic acid), ultrasonically dispersing for 20-60 minutes to obtain composite material. An INDEPENDENT CLAIM is also included for a method for preparing graphene-based water-soluble quantum dots/poly (3,4-ethylenedioxy-thiophene)-poly (styrene sulfonic acid) composite memory storage device comprises lower electrode.