▎ 摘　　要

NOVELTY - Field effect transistor structure (10) comprises a fin-shaped channel (120) protruding from a substrate (110) and extending in one direction, a source electrode (S) on one side of the fin-shaped channel, a drain electrode (D) separated from the source electrode with the fin-shaped channel, a gate insulating film surrounding side surfaces of the fin-shaped and upper surfaces of the fin-shaped channel, a gate electrode on the gate insulating film, and a two-dimensional semiconductor material layer between the gate insulating film and the gate electrode. USE - Field effect transistor structure. ADVANTAGE - The field effect transistor structure is capable of reducing the size of a field effect transistor and/or controlling a threshold voltage. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic perspective view of a field effect transistor structure. 10Field effect transistor structure 110Substrate 120Fin-shaped channel DDrain electrode SSource electrode