▎ 摘　　要

NOVELTY - Control method of graphene band gap comprises preprocessing silicon carbide surface and putting into sample box; epitaxial growing and etching graphene using hydrogen on preprocessed silicon carbide surface; annealing under inert gas protection; and introducing 99.5-99.8% oxygen, vacuum heating with metal tungsten, doping, and controlling oxygen atom. USE - Method for controlling graphene band gap (claimed). ADVANTAGE - The graphene has band gap of 0-0.5 eV.