• 专利标题:   Control method of graphene band gap comprises preprocessing silicon carbide surface, putting into sample box, etching, annealing, introducing oxygen, vacuum heating, doping, and controlling oxygen atom.
  • 专利号:   CN106082183-A
  • 发明人:   WANG Q, DONG J, ZHANG W, REN N, LUO P
  • 专利权人:   UNIV JIANGSU
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN106082183-A 09 Nov 2016 C01B-031/04 201681 Pages: 6 Chinese
  • 申请详细信息:   CN106082183-A CN10394652 06 Jun 2016
  • 优先权号:   CN10394652

▎ 摘  要

NOVELTY - Control method of graphene band gap comprises preprocessing silicon carbide surface and putting into sample box; epitaxial growing and etching graphene using hydrogen on preprocessed silicon carbide surface; annealing under inert gas protection; and introducing 99.5-99.8% oxygen, vacuum heating with metal tungsten, doping, and controlling oxygen atom. USE - Method for controlling graphene band gap (claimed). ADVANTAGE - The graphene has band gap of 0-0.5 eV.