• 专利标题:   Multiple-atom-doped graphene material prepared by providing graphene and soaking in the solution, taking out after washing, cleaning, adding into sintering furnace under the condition of inletting ammonia gas.
  • 专利号:   CN106219530-A, CN106219530-B
  • 发明人:   XIE Z, WU X, HUANG Q, GAO P, SUN M, YANG P, DENG X
  • 专利权人:   UNIV CENT SOUTH, UNIV CENT SOUTH
  • 国际专利分类:   C01B031/04, C01B032/194
  • 专利详细信息:   CN106219530-A 14 Dec 2016 C01B-031/04 201712 Pages: 6 Chinese
  • 申请详细信息:   CN106219530-A CN10609282 28 Jul 2016
  • 优先权号:   CN10609282

▎ 摘  要

NOVELTY - Multiple-atom-doped graphene material is claimed, where the porosity of the plurality atom doped graphene material is 10-30 wt.%, the total doping rate is 12-35 wt.%. USE - Used as multiple-atom-doped graphene material. ADVANTAGE - The method is simple and convenient for large-scale industrial application. The material has excellent performance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing multiple-atom-doped graphene material comprises providing graphene and soaking in the solution, taking out after washing, cleaning, adding into sintering furnace under the condition of inletting ammonia gas at 700-900 degrees C for reaction to obtain atom doped graphene material with high porosity and high doping rate, where the dipping liquid containing hydrogen fluoride and hydrogen peroxide with mol ratio 1:1-3:1, immersing the immersion fluid hydrogen peroxide concentration is 1-6 mol/l.