• 专利标题:   High thermal conductivity composite crucible useful for polycrystalline silicon ingot comprises crucible body having cavity structure with open upper end, and quartz ceramic structure layer laid on graphene-silica composite material layer.
  • 专利号:   CN113045187-A, CN214612163-U
  • 发明人:   LI J, XIE Y, GAO Y
  • 专利权人:   YANTAI HEJING CERAMIC NEW MATERIALS CO L
  • 国际专利分类:   C03B020/00, C03B019/02, C03C003/06, C03C017/34, C30B028/06, C30B029/06
  • 专利详细信息:   CN113045187-A 29 Jun 2021 C03B-020/00 202166 Pages: 6 Chinese
  • 申请详细信息:   CN113045187-A CN10425138 20 Apr 2021
  • 优先权号:   CN10425138, CN20811971

▎ 摘  要

NOVELTY - High thermal conductivity composite crucible comprises a crucible body (1). The crucible body is a cavity structure with an open upper end. A graphene-silica composite material layer (3) is laid on the bottom of the inner cavity of the crucible body. A quartz ceramic structure layer (2) is laid on the graphene-silica composite material layer. USE - The composite crucible is useful for polycrystalline silicon ingot. ADVANTAGE - The method enhances the mechanical and thermal properties of the material. The composite crucible has high strength and good toughness; reduces the overflow rate of the crucible and reduces the energy consumption of the ingot casting process; improves the quality of polysilicon crystals; and meets the market demand. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) material for manufacturing high thermal conductivity composite crucible for polycrystalline silicon ingots comprising graphene oxide, toluene and monomer siloxane; and (2) preparing high thermal conductivity composite crucible for polycrystalline silicon ingots. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the high thermal conductivity composite crucible for polycrystalline silicon ingot. Crucible body (1) Quartz ceramic structure layer (2) Graphene-silica composite material layer (3)