▎ 摘　　要

NOVELTY - Preparing graphene/metal composite material comprises (i) preparing graphene oxide dispersion by slowly evaporating water in the dispersion and obtaining a graphene oxide film at the bottom of the vessel and then transferring graphene oxide film into a tubular furnace to carry out high temperature thermal reduction to obtain a graphene film; (ii) coating a layer of metal boron, titanium, chromium and their carbide on the surface of the graphene film by using magnetron sputtering; and (iii) closely stacking the plated graphene film and the metal foil, winding a certain number of turns uniformly on the reel, cold pressing the wound sample and then blanking into a wafer sample and subjecting the wafer sample to hot press sintering to obtain a bulk composite. USE - The material is useful for high speed train insulated gate bipolar transistor (IGBT) packaging (claimed). ADVANTAGE - The method has simple process and can meet the requirements of the packaging materials at planar thermal conductivity of 600-810 W/mK.