▎ 摘　　要

NOVELTY - Layer structure comprises a lower layer (110), an ion implantation layer (120) in the lower layer, and a carbon-based material layer (130) on the ion implantation layer. The ion implantation layer includes carbon. USE - Layer structure for use in an integrated circuit device. ADVANTAGE - The layer structure has high electrical performance with an ultra small structure, and realizes miniaturization, low power, and high performance, and ensures a stable operation and high-speed operation of the electronic device. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: 1. an electronic device comprising: a data storage element; a transistor connected to a first side of the date storage element; and a conductive layer connected to a second side of the data storage element through the layer structure; and 2. a method of manufacturing a layer structure, comprising: a. forming an ion implantation layer including carbon in a lower layer; b. forming an upper layer covering the ion implantation layer on the lower layer; c. exposing the ion implantation layer by removing a portion of the upper layer; d. forming a trench in an exposed portion of the ion implantation layer; e. forming a carbon-based material layer on the ion implantation layer in the trench by performing a heat treatment process on the lower layer in which the ion implantation layer is formed, where the heat treatment process includes one of forming a coating of the carbon-based material layer on an inner surface of the trench and filling at least a portion of the trench with the carbon-based material layer. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of the layer structure. 100First layer structure 110Lower layer 120Ion implantation layer 130Carbon-based material layer