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  • 专利标题:   Method for doping graphene layer for doped graphene film, involves forming catalytic metal layer on graphene layer, placing dopants on substrate, removing metal layer, providing graphene layer on substrate, and removing support layer.
  • 专利号:   KR2013096836-A, KR1461977-B1
  • 发明人:   JUNG M, RHO J, SEO B, MOON J
  • 专利权人:   LG ELECTRONICS INC
  • 国际专利分类:   C01B031/02, C23C014/04
  • 专利详细信息:   KR2013096836-A 02 Sep 2013 C01B-031/02 201379 Pages: 13
  • 申请详细信息:   KR2013096836-A KR018359 23 Feb 2012
  • 优先权号:   KR018359

▎ 摘　　要

NOVELTY - Method for doping graphene layer involves forming catalytic metal layer on graphene layer, placing dopants on substrate, removing catalytic metal layer, providing graphene layer on substrate, and removing support layer. USE - Method for doping graphene layer for doped graphene film (claimed). DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for doped graphene film.