▎ 摘　　要

NOVELTY - A low-temperature polycrystalline silicon thin film transistor has an active layer arranged on a substrate, a source electrode, a drain electrode, a gate electrode, a gate insulating layer arranged between the active layer and the gate electrode, and an oxidized graphene layer arranged between the active layer and the grid insulating layer. USE - The low-temperature polycrystalline silicon thin film transistor is useful in an array substrate of a display panel (all claimed). ADVANTAGE - The low-temperature polycrystalline silicon thin film transistor has reduced surface roughness and surface defect mode density. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) an array substrate; (2) a display panel; and (3) the method for the manufacture of low-temperature polycrystalline silicon thin film transistor.