▎ 摘　　要

NOVELTY - Thin film is formed by polishing the surface of substrate consists of metal or metallic compound to surface roughness of less than or equal to 5 nm Rmax, and forming thin film as base surface from monoatomic layer or diatomic layers using to-be-polished surface as template. USE - Formation method of thin film for graphene film of hexagonal boron nitride (h-BN) (claimed) used as flexible transistor and transparent electrode. ADVANTAGE - Grain boundaries and defects are reduced, reproducibility is sufficient and stable, excellent in transparency, and flexible. DESCRIPTION OF DRAWING(S) - The drawing shows molecular structured of graphene film (a), and h-BN film (b). (Drawing includes non-English language text).