▎ 摘　　要

NOVELTY - The device has an active pattern fixed on a substrate (100). A gate electrode (GE) is fixed on the active pattern, and intersects the active pattern. The active pattern comprises a first buffer pattern (102) on the substrate, a channel pattern (108) on the first buffer pattern, a doped pattern (104) fixed between the first buffer pattern and the channel pattern and a second buffer pattern (106) fixed between the doped pattern and the channel pattern. The doped pattern includes graphene injected with impurity. USE - Multi-functional semiconductor device i.e. FET, for an electronic system in an electronic industry. Uses include but are not limited to a personal digital assistant (PDA), a portable computer, a web tablet, a wireless phone, a mobile phone, a digital music player and a memory card. ADVANTAGE - The device improves operating characteristics and reliability and easily provides semiconductor components that are formed of same channel material and included with threshold voltages different from each other. The device increases electrical conductivity in a channel, thus improving performance of the device as a doped graphene layer with thickness of atom and characteristic dispersion of associated transistor are enhanced by employing doped graphene in accordance with principles of extra carriers available in the semiconductor device's channel. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a semiconductor device. Gate electrode (GE) Substrate (100) Buffer patterns (102, 106) Doped pattern (104) Channel pattern (108)