▎ 摘　　要

NOVELTY - The method involves forming silicon oxide layer in upper portion of substrate (201). A laser beam is irradiated towards substrate under gas atmosphere. An insulating layer (205) is laminated between source and drain regions. Drain and gate electrodes are formed on insulating layer. USE - Graphene transistor manufacturing method. ADVANTAGE - The graphene transistor can be manufactured efficiently at low cost. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating process for manufacturing graphene transistor. Substrate (201) Graphene (202) Semiconductor device (203) Rear area (204) Insulating layer (205)