▎ 摘　　要

NOVELTY - The soft memristor has a substrate (100), a first electrode layer (110) formed on the substrate, and a metal diffusion barrier layer (120) formed on the first electrode layer. A resistive switching material layer (130) is formed on the metal diffusion barrier layer. A second electrode layer (140) is formed on the resistive switching material layer. The metal diffusion barrier layer is formed of any one selected from the group consisting of silicon nitride (Si2N3), titanium nitride (TiN), and graphene. The size of metal filaments formed in a filament-type soft memristor is controlled by the metal diffusion barrier layer. The resistive switching material layer is formed of a polymer-deposited insulating film. The polymer-deposited insulating film is formed of any one selected from the group consisting of poly(cyclosiloxane), poly(FMA), poly(IBC), poly(ethylene glycol) dimethacrylate, and poly(V3D3). USE - Soft memristor for soft neuromorphic system. ADVANTAGE - Improves recognition rate of neuromorphic system by improving the symmetric synaptic characteristics by which abrupt formation or breakage of the filaments formed inside the memristor occurs in response to a pulse voltage applied for synaptic potentiation and depression into symmetric synaptic characteristics is necessary. Enables manufacture of synapse device allowing analog switching through fine control of the filament size of a memristor and having symmetric synaptic characteristics. Provides basis for an intelligent soft electronic system that conveniently provides artificial intelligence service to users. The introduction of identical pulses saves the necessity of complexity and large area of peripheral circuits for memristors to achieve a gradual increase or decrease in voltage to the memristor in order to realize symmetric synaptic characteristics. The introduction of metal diffusion barrier layer allows application of a gradually decreasing voltage to the soft memristor by acting as voltage divider and, thus, improves the asymmetric synaptic characteristics occurring in response to the same pulse voltage applied to the memristor for synaptic potentiation and depression into symmetric synaptic characteristics. DETAILED DESCRIPTION - The substrate is formed of a material selected from the group consisting of polymethyl methacrylate (PMMA), polycarbonate (PC), polyether sulfone (PES), poly(ADP-ribose) (PAR), polyimide (PI), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyether ether ketone (PEEK). The first and second electrode layers are formed of a material selected from the group consisting of copper (Cu), nickel (Ni), titanium (Ti), hafnium (Hf), zirconium (Zr), zinc (Zn), tungsten (W), cobalt (Co), vanadium (V), aluminum (Al), and platinum (Pt). DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the structure of a soft memristor. Substrate (100) First electrode layer (110) Metal diffusion layer (120) Resistive switching material layer (130) Second electrode layer (140)