▎ 摘　　要

NOVELTY - Gallium nitride (GaN)-based substrate, epitaxial graphene direct chemical vapor deposition (CVD) growth comprises using III-V group compound semiconductor GaN as substrate, pre-processing GaN substrate, controlling growth pressure, flow rate and temperature, directly growing graphene on GaN, and providing material as gallium nitride-graphene device structure. USE - Method of gallium nitride (GaN)-based substrate, epitaxial graphene direct chemical vapor deposition (CVD) growth (claimed). DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the gallium nitride-based substrate, epitaxial graphene direct chemical vapor deposition growth.