▎ 摘　　要

NOVELTY - Two-dimensional (2D) material-based wiring conductive layer contact structure comprises: a semiconducting 2D material wiring (10); a conductive layer (30) on the semiconducting 2D material wiring; and a metallic 2D material layer (20) between the semiconducting 2D material wiring and the conductive layer, where the metallic 2D material layer is in contact with the semiconducting 2D material wiring and the conductive layer. USE - The structure is useful in the 2D material-based FET (claimed). ADVANTAGE - The structure: maintains a high charge mobility and is less affected by a short-channel effect, thus miniaturizing semiconductor devices and exhibits semiconductor characteristics; and reduces heat generation of a contact area between the wiring and the conductive and enhances signal transmission characteristics. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) a 2D material-based FET; and (2) manufacturing the 2D material-based FET. DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of a contact form between a two-dimensional (2D) material wiring and a conductive layer Semiconducting 2D material wiring (10) Metallic 2D material layer (20) Conductive layer (30)