• 专利标题:   Antenna integrated PIN junction graphene terahertz detector has preset ohmic contact electrode and specific ohmic contact electrode that are arranged on P-region and N-region of graphene PIN junction.
  • 专利号:   CN203288593-U
  • 发明人:   FENG Z, SONG X, WANG J, WEI C, XING D, ZHANG L, ZHANG X, YANG D, LIANG S, HE Z
  • 专利权人:   CHINA ELECTRONICS TECHNOLOGY GROUP CORP
  • 国际专利分类:   H01L027/144, H01Q001/22
  • 专利详细信息:   CN203288593-U 13 Nov 2013 H01L-027/144 201405 Pages: 6 Chinese
  • 申请详细信息:   CN203288593-U CN20306030 30 May 2013
  • 优先权号:   CN20306030

▎ 摘  要

NOVELTY - This utility model claims an antenna integrated PIN junction graphene terahertz detector, belonging to the field of the semiconductor device. This utility model comprises a substrate, wherein the substrate is a planar antenna and graphene PIN junction, the plane antenna and the graphene PIN junction is provided with gap, and is provided with the first ohmic contact electrode and the second ohm contact electrode on the P region and the N region of the graphene PIN. And present the terahertz detector, detecting range of the detector is made of the utility model can cover the whole terahertz frequency range, and fast response speed, which is about a picosecond level, at the same time, the utility model detector in low cost, simple manufacturing process, and it greatly improves the performance of the wave terahertz detector, at the same time, the detector is further capable of being in the room temperature, overcomes the current detector to a defect of a work and improve the adaptability of the detector is integrated planar antenna, but also improves the detecting ability is weak terahertz signal.