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  • 专利标题:   Etchant composition to manufacture graphene with low sheet resistance, comprises sulfuric acid, hydrogen peroxide, purified water, N-heterocyclic aromatic compound e.g. benzotriazole, and aromatic boric acid e.g. phenyl boric acid.
  • 专利号:   KR2395072-B1, US2023203373-A1, WO2023128047-A1
  • 发明人:   MOON J, KWON Y, WOOK Y B, LEE S M, MOON S I, KIM K S, LEE G H, HYUN D, SIMSUJIN, SHIM S J, HYUN D S, YOO B W, KWON Y D, MOON J T
  • 专利权人:   GRAPHENELAB CO LTD, GRAPHENELAB CO LTD
  • 国际专利分类:   C01B032/194, C09K013/06, C09K013/10
  • 专利详细信息:   KR2395072-B1 09 May 2022 C09K-013/06 202241 Pages: 8
  • 申请详细信息:   KR2395072-B1 KR188779 27 Dec 2021
  • 优先权号:   KR188779

▎ 摘　　要

NOVELTY - Etchant composition comprises sulfuric acid, hydrogen peroxide, N-heterocyclic aromatic compound, aromatic boric acid and purified water. The N-heterocyclic aromatic compound contains benzoimidazole or benzotriazole. The aromatic boric acid is made of phenyl boric acid. USE - The etchant composition is useful for manufacturing graphene with low sheet resistance (claimed). ADVANTAGE - The composition reduces sheet resistance of graphene prepared through chemical vapor deposition.