▎ 摘　　要

NOVELTY - Silicon carbide surface (4H/6H-SiC) is cleaned, and placed in chemical vapor deposition (CVD) furnace cavity filled with hydrogen. Furnace is heated and hydrogen etching process. Sample is cooled, and etched. Sample is cooled, and silane is filled in furnace. Furnace is maintained for 5-15 minutes, and oxides produced on substrate surface are removed. Surface oxide-removed substrate is further placed in CVD furnace cavity which is filled with argon. The furnace is heated and wafer-level epitaxial graphene is formed on surface of silicon carbide surface (4H/6H-SiC). USE - Method for growing wafer-level epitaxial graphene on silicon carbon surface. ADVANTAGE - The method efficiently provides wafer-level epitaxial graphene-containing silicon carbide surface having excellent uniformly. DETAILED DESCRIPTION - Silicon carbide surface (4H/6H-SiC) is cleaned, and the cleaned sample is placed in a chemical vapor deposition (CVD) furnace cavity which is filled with hydrogen at the flow rate of 50-70 l/minute. The furnace is heated at 1550-1650 degrees C for 50-70 minutes under pressure of 0.9-1.1 bar, and hydrogen etching process is performed to remove surface scratches of the sample, and regular stepped stripes are formed. The sample is cooled, and hydrogen etching process is carried out at 950-1050 degrees C in CVD furnace cavity, and maintained for 6-10 minutes. The sample is cooled at 840-860 degrees C, and the silane is filled in the furnace at the flow rate of 0.5 ml/minute. The furnace is maintained for 5-15 minutes, and oxides produced on the substrate surface are removed. Surface oxide-removed substrate is further placed in CVD furnace cavity which is filled with argon in the flow rate of 1-3 l/minute under pressure of 2-6 mbar. The furnace is heated at 1590-1610 degrees C, maintained for 80-120 minutes, and wafer-level epitaxial graphene is formed on surface of silicon carbide (4H/6H-SiC).