• 专利标题:   Graphene-based sandwich structure heat dissipation film for semiconductor device, comprises redox graphene layer, and chemical vapor deposition graphene layer which is provided on both sides of surface of redox graphene layer.
  • 专利号:   CN112490204-A
  • 发明人:   LI X, ZHU L, SHEN X, YANG X, LIU K, SUN Y, DANG X, HU L, LIU W, HAN C
  • 专利权人:   UNIV XIAN JIAOTONG
  • 国际专利分类:   H01L023/367, H01L023/373
  • 专利详细信息:   CN112490204-A 12 Mar 2021 H01L-023/367 202135 Pages: 12 Chinese
  • 申请详细信息:   CN112490204-A CN11349967 26 Nov 2020
  • 优先权号:   CN11349967

▎ 摘  要

NOVELTY - A graphene-based sandwich structure heat dissipation film comprises redox graphene layer and chemical vapor deposition graphene layer. The surfaces of both sides of the redox graphene layer are provided with chemical vapor deposition graphene layers. USE - Graphene-based sandwich structure heat dissipation film for semiconductor device (claimed). ADVANTAGE - The heat dissipation film with sandwich structure has excellent heat transfer capability in a direction parallel or perpendicular to the substrate, and can make the substrate or semiconductor device perform rapid and uniform heat dissipation. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of the heat dissipation film, which involves using chemical vapor deposition method to grow a chemical vapor deposition graphene layer on a metal substrate, preparing a redox graphene layer on the surface of the chemical vapor deposition graphene layer, drying, and rinsing.