▎ 摘　　要

NOVELTY - Preparing graphene, comprises adopting radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) method and using magnetron sputtering system to prepare polycrystalline cobalt film as a substrate, and under substrate temperature of less than 800 degrees C, total gas flow rate of less than 78sccm, and short deposition time of 40 seconds, preparing high-quality 1-5C graphene. USE - The grapheme is useful for electronic device and optical device. ADVANTAGE - The method is carried out under relatively low temperature, has short depositing time, requires less carbon source, and greatly reduces grapheme cost. The graphene has high surface area, high optical transmittance, high conductivity, and excellent physical property.