• 专利标题:   Semiconductor device manufacture method for making solar cells, involves forming graphene layer overlying nanopillars of substrate structure, in which graphene layer is connected to each nanopillar formed overlying conductive layer.
  • 专利号:   EP3264474-A1, US2018006169-A1, CN107564980-A
  • 发明人:   ZHOU M
  • 专利权人:   SEMICONDUCTOR MFG INT SHANGHAI CORP, SEMICONDUCTOR MFG INT BEIJING CORP, SEMICONDUCTOR MFG INT SHANGHAI CORP, SEMICONDUCTOR MFG INT BEIJING CORP, SEMICONDUCTOR MFG INT BEIJING CORP
  • 国际专利分类:   H01L031/0224, H01L031/0352, H01L021/02, H01L031/02, H01L031/0236, H01L031/04, H01L031/18, H01L031/072
  • 专利详细信息:   EP3264474-A1 03 Jan 2018 H01L-031/0352 201805 Pages: 16 English
  • 申请详细信息:   EP3264474-A1 EP178367 28 Jun 2017
  • 优先权号:   CN10510623

▎ 摘  要

NOVELTY - The manufacture method involves providing a substrate structure that includes a nanopillars spaced apart from each other overlying a conductive layer. Each nanopillar has a first semiconductor layer and a second semiconductor layer having different conductivity types. A graphene layer is then formed overlying the nanopillars. The graphene layer is connected to each of the nanopillars. USE - Semiconductor device manufacture method for making solar cells. ADVANTAGE - Provides a semiconductor device manufacture method capable of making a semiconductor device with improved solar cell conversion efficiency. Ensures that the surface area of the nanopillars is increased relative to the planar solar cell to improve the absorption efficiency of the photo and improve solar cell conversion efficiency. Uses a graphene layer as the electrode to connect the nanopillars of the solar cell and reduce contact resistance between the electrode and the semiconductor, thus improving carrier mobility and conversion efficiency of solar cells. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for the manufactured semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a simplified flow chart of the semiconductor device manufacture method. Substrate structure providing process (102) Graphene layer forming process (104)