▎ 摘　　要

NOVELTY - The pipeline has a first section (201), a second section (202) and a third section (203) that are sequentially connected in direction from a gas supply source to a reaction chamber of a semiconductor device. The second section is provided with a flow control device. The first section and the third section are respectively provided with a first heating unit (204) and a second heating unit (206) capable of independently controlling the temperature, and are used for respectively heating the first section and the third section to heat process gas in gas pipeline at different areas. The heat conduction band is made of graphene grease or heat conducting silicone grease. The heat preservation layer is made of fire-resistant and heat-insulated material. The heat preservation layer is made of ethylene propylene diene rubber. USE - Gas pipeline for transmitting process gas from gas supply source to reaction chamber of a semiconductor device (claimed). ADVANTAGE - The pipeline: can improve the temperature of the process gas to avoid pressure change of the gas pipeline caused by its condensation in the gas pipeline and the low quality of the film deposition; and can avoid the temperature of the process gas flowing into the flow control device from being too high to damage the flow control device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for method for heating process gas. DESCRIPTION OF DRAWING(S) - The drawing shows a structural schematic diagram of the gas pipeline. 4First interface 5Second interface 201First section 202Second section 203Third section 204First heating unit 206Second heating unit