▎ 摘　　要

NOVELTY - The wiring structure (20) has a first conductive material layer. A nanocrystalline graphene (50) layer is provided on a substantial entirety of the first conductive material layer. A seed layer is provided on the first conductive material layer. The nanocrystalline graphene layer is directly grown on the seed layer. The nanocrystalline graphene layer has a ratio of 2D/G of a Raman spectrum which is equal to or greater than 0.05, and a ratio of D/G that is equal to or less than 2. USE - Wiring structure for use in electronic device e.g. memory device. ADVANTAGE - A specific resistance of a wiring structure is reduced by inserting graphene between actual wiring structures of the multi-stack structure. The nanocrystalline graphene has a lot of sites to which a dopant is bonded, and thus a doping effect is greatly increased. The wiring structure has a high adhesive strength to a surface of a metal and has a reduced resistance of a wiring is realized. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic cross-sectional view of a wiring structure. Wiring structure (20) Conductive material layer (30) Nanocrystalline graphene (50) Graphene layer (70)