▎ 摘　　要

NOVELTY - A composition comprises (i) water, (ii) one or more oxidizing agents, and (iii) one or more acids. USE - Composition used for fabricating semiconductor structure on semiconductor device for removing metal-containing layer of pellicle structure (all claimed). Uses include but are not limited to flat panel display, phase change memory device, solar panel, solar substrate, photovoltaics, microelectromechanical system (MEMS), microelectronics, integrated circuit, computer chip applications. ADVANTAGE - The composition is capable of removing metal-containing layer of pellicle structure with high removability rate. The heat dissipation layer is formed using a material having excellent chemical resistance to hydrogen, thereby providing a pellicle structure with improved reliability and lifespan characteristics. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) fabrication of semiconductor device on semiconductor wafer, which involves (a) forming one or more layers over a silicon substrate in which at least one of the layers comprises a nickel-containing layer, and (b) removing the nickel-containing layer by contacting the nickel-containing layer with the composition; and (2) removal of metal-containing layer of pellicle structure, which involves providing the semiconductor device comprising a substrate, an extreme UV (EUV) mask and a metal-containing EUV mask-protecting structure, exposing the semiconductor device to EUV radiation, and removing the metal-containing EUV mask-protecting structure by contacting the semiconductor device to the composition.