▎ 摘　　要

NOVELTY - The device has a lower channel layer in which electrons are divided into positive and negative polarized spins when current flows according to application of power. A free layer is formed on an upper surface of the layer and stores magnetization information by switching a magnetization direction to a positive or negative axis direction by the generated torque. An insulating layer i.e. insulating film layer, is formed between the free layer and a pinned layer, and insulates the free and pinned layers. An upper channel layer (350) is provided on a certain region of the pinned layer. The insulating layer (second insulating layer) is made of silicon oxide (SiOx), aluminum oxide (AlOx), magnesium oxide, hafnium oxide (HfOx), titanium oxide (TiOx), and tantalum oxide (TaOx), where x is not defined. USE - Nano spin device using spin current of ferromagnetic material and heavy metal channel. ADVANTAGE - The torque is generated in both upper and lower portions of the free layer, so that switching is easily performed in free layer with a smaller current. DETAILED DESCRIPTION - The device has a lower channel layer (310) in which electrons are divided into positive and negative polarized spins when current flows according to application of power. A free layer (320) is formed on an upper surface of the layer and stores magnetization information by switching a magnetization direction to a positive or negative axis direction by the generated torque. An insulating layer i.e. insulating film layer, is formed between the free layer and a pinned layer, and insulates the free and pinned layers. An upper channel layer is provided on a certain region of the pinned layer. The insulating layer (second insulating layer) is made of silicon oxide (SiOx), aluminum oxide (AlOx), magnesium oxide, hafnium oxide (HfOx), titanium oxide (TiOx), and tantalum oxide (TaOx), where x is not defined. The lower channel layer is made of tungsten, platinum, gold, and/or tantalum, preferably bismuth selenide, bismuth telluride, tungsten selenide, tungsten telluride, silver telluride, graphene, silicon, gallium arsenide and/or indium arsenide. The lower channel layer has a heterostructure having multiple semiconductor layers. The free layer is made of cobalt, iron, nickel, terbium, europium, gadolinium, cobalt-iron, iron-nickel, cobalt-nickel, and/or cobalt-iron boron. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the nano spin device using spin currents of ferromagnetic and heavy metal channels (Drawing includes non-English language text). 310Lower channel layer 320Free layer 330First insulating layer 340Fixed bed 350Upper channel layer